Manufacturer Part Number
STP11NM60N
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
600V Drain-Source Voltage
10A Continuous Drain Current
450mΩ On-Resistance
90W Power Dissipation
850pF Input Capacitance
31nC Gate Charge
150°C Operating Temperature
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power switching
Compact TO-220 package
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 450mΩ
Continuous Drain Current (Id): 10A
Power Dissipation (Ptot): 90W
Input Capacitance (Ciss): 850pF
Gate Charge (Qg): 31nC
Quality and Safety Features
RoHS3 Compliant
TO-220 Package
Compatibility
Compatible with various power electronics and industrial applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Product Lifecycle
Active product, no indication of discontinuation
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power switching
Compact and reliable TO-220 package
Suitable for a wide range of power electronics applications
Backed by the renowned STMicroelectronics brand