Manufacturer Part Number
STP11NM60FDFP
Manufacturer
STMicroelectronics
Introduction
Single N-channel MOSFET with fast switching performance and low on-state resistance.
Product Features and Performance
600V drain-source voltage
11A continuous drain current at 25°C
450mΩ maximum on-state resistance at 5.5A, 10V
900pF maximum input capacitance at 25V
35W maximum power dissipation at Tc
5V maximum gate threshold voltage at 250A
10V maximum drive voltage for minimum on-state resistance
Product Advantages
Fast switching performance
Low on-state resistance
High power handling capability
Robust and reliable design
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 450mΩ @ 5.5A, 10V
Drain Current (Id): 11A (Tc)
Input Capacitance (Ciss): 900pF @ 25V
Power Dissipation (Pd): 35W (Tc)
Quality and Safety Features
RoHS3 compliant
Qualified to automotive and industrial standards
Compatibility
TO-220-3 full pack package
Suitable for a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Inverters
Welding equipment
Industrial automation and control
Product Lifecycle
Currently in production
Replacements and upgrades available
Several Key Reasons to Choose This Product
Fast switching performance for efficient power conversion
Low on-state resistance for reduced power losses
High power handling capability for demanding applications
Robust and reliable design for long-term operation
Compliance with industry safety and environmental standards