Manufacturer Part Number
STP120N4F6
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Designed for automotive and industrial applications
Product Features and Performance
Wide operating temperature range: -55°C to 175°C
Low on-resistance: 4.3 mΩ
High continuous drain current: 80A
Low gate charge: 65 nC
Low input capacitance: 3850 pF
High drain-to-source voltage: 40 V
Suitable for high-frequency switching applications
Product Advantages
Excellent thermal management
Robust and reliable design
Suitable for high-power and high-current applications
Automotive-grade AEC-Q101 qualified
Key Technical Parameters
Drain-to-Source Voltage (VDS): 40 V
Gate-to-Source Voltage (VGS): ±20 V
On-Resistance (RDS(on)): 4.3 mΩ
Continuous Drain Current (ID): 80A
Input Capacitance (Ciss): 3850 pF
Power Dissipation (PD): 110W
Quality and Safety Features
RoHS3 compliant
AEC-Q101 automotive qualification
Through-hole TO-220 package
Compatibility
Suitable for various automotive and industrial applications
Can be used as a replacement for similar power MOSFET devices
Application Areas
Automotive systems (e.g., power steering, fuel pumps, HVAC)
Industrial motor drives
Switch-mode power supplies
Inverters and converters
Product Lifecycle
The STP120N4F6 is an active product and is not nearing discontinuation.
Replacement or upgraded versions may be available in the future.
Key Reasons to Choose This Product
High-performance and reliable power MOSFET for demanding applications
Excellent thermal management and low on-resistance for efficient operation
Automotive-grade qualification for use in harsh environments
Versatile and compatible with various industrial and automotive systems
Availability of technical support and long-term product lifecycle from STMicroelectronics