Manufacturer Part Number
STF25NM60ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET for industrial applications
Product Features and Performance
600V drain-to-source voltage rating
Low on-resistance of 160mΩ at 10.5A, 10V
21A continuous drain current rating at 25°C
150°C maximum junction temperature
Fast switching characteristics with low gate charge of 80nC at 10V
Product Advantages
Excellent power efficiency due to low on-resistance
Reliable operation at high temperatures
Robust design for industrial and harsh environments
Efficient switching performance for power conversion applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (RDS(on)): 160mΩ @ 10.5A, 10V
Drain Current (ID): 21A @ 25°C
Input Capacitance (Ciss): 2400pF @ 50V
Power Dissipation: 40W @ 25°C
Quality and Safety Features
RoHS3 compliant
TO-220FP package for secure mounting and heat dissipation
Compatibility
Suitable for a wide range of industrial power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial automation and control systems
Product Lifecycle
Current production model
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and low losses
Reliable high-temperature operation
Robust industrial-grade design
Efficient switching performance for power conversion
Compatibility with a wide range of industrial applications
STF25N80K5 MOSSTMicroelectronics