Manufacturer Part Number
STF26N65DM2
Manufacturer
STMicroelectronics
Introduction
High-voltage N-channel power MOSFET in a TO-220FP package
Product Features and Performance
650V drain-to-source voltage
190mΩ maximum on-resistance
20A continuous drain current at 25°C
1480pF maximum input capacitance
30W maximum power dissipation
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capability
High voltage and low on-resistance
Robust and reliable performance
Suitable for a wide range of power applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 650V
Maximum gate-to-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 190mΩ @ 10A, 10V
Continuous drain current (Id): 20A @ 25°C
Input capacitance (Ciss): 1480pF @ 100V
Power dissipation (Pd): 30W @ Tc
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a variety of power electronic applications, such as
- Switching power supplies
- Motor drives
- Industrial controls
- Automotive electronics
Application Areas
Power conversion and control
Industrial and commercial equipment
Automotive and transportation systems
Product Lifecycle
Currently in active production
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and robust performance
Wide operating temperature range
RoHS compliance for environmental safety
Compatibility with a broad range of power electronics applications
STF25N60M2STMicroelectronics