Manufacturer Part Number
STF28N60DM2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
Ultra-low on-resistance (RDS(on)) for high efficiency
Robust and reliable design
Very low gate charge (Qg) for fast switching
Excellent thermal management capability
High drain-source breakdown voltage (Vdss)
Product Advantages
Improved energy efficiency
Reduced power losses
Fast switching capability
Reliable operation in high-temperature environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Maximum Gate-to-Source Voltage (Vgs(max)): ±25V
On-Resistance (RDS(on)): 160mΩ @ 10.5A, 10V
Continuous Drain Current (ID): 21A @ 25°C
Input Capacitance (Ciss): 1500pF @ 100V
Power Dissipation (Ptot): 30W @ Tc
Quality and Safety Features
Compliant with RoHS3 directive
Robust TO-220FP package design
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Power supplies
Motor drives
Inverters
Switching power amplifiers
Industrial and consumer electronics
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose This Product
Excellent energy efficiency and low power losses
Fast switching capability for high-frequency applications
Reliable operation in high-temperature environments
Robust and reliable design for long-term usage
Compliance with RoHS3 directive for environmental sustainability