Manufacturer Part Number
STF26NM60N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor suitable for power conversion and control applications.
Product Features and Performance
600V drain-source voltage
20A continuous drain current
Low on-resistance of 165mΩ
Fast switching capabilities
Wide operating temperature range up to 150°C
High power dissipation of 35W
Product Advantages
Excellent power handling and efficiency
Reliable and robust design
Suitable for a variety of power conversion applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 165mΩ
Continuous Drain Current (Id): 20A
Power Dissipation (Tc): 35W
Input Capacitance (Ciss): 1800pF
Gate Charge (Qg): 60nC
Quality and Safety Features
RoHS3 compliant
Meets high-reliability standards
Compatibility
Compatible with a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting controls
Industrial and consumer electronics
Product Lifecycle
Currently available, no plans for discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and robust design
Wide operating temperature range
Suitable for a variety of power conversion applications
RoHS3 compliance for environmental sustainability