Manufacturer Part Number
STF25N60M2-EP
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
High avalanche capability
Low on-resistance
Fast switching speed
High power density
Suitable for high-frequency, high-efficiency switching applications
Product Advantages
Excellent thermal and electrical performance
Robust design for high reliability
Optimized for low power consumption
Key Technical Parameters
Drain to Source Voltage (Vdss): 600 V
Gate-Source Voltage (Vgs Max): ±25 V
On-Resistance (Rds(on) Max): 188 mΩ
Continuous Drain Current (Id): 18 A
Input Capacitance (Ciss Max): 1090 pF
Power Dissipation (Tc): 30 W
Quality and Safety Features
RoHS3 compliant
Robust design for high reliability
Compatibility
Through-hole mounting (TO-220-3 package)
Application Areas
Switching power supplies
Motor drives
Inductive loads
Industrial and consumer electronics
Product Lifecycle
Currently available
No discontinuation planned
Key Reasons to Choose This Product
Excellent electrical and thermal performance
High reliability and long lifespan
Suitable for high-efficiency, high-frequency switching applications
RoHS3 compliance for environmental friendliness
STF25N60M2STMicroelectronics