Manufacturer Part Number
STF25N80K5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET with low on-state resistance and high breakdown voltage
Product Features and Performance
800V drain-to-source voltage
260mΩ on-state resistance at 19.5A, 10V
5A continuous drain current at 25°C
40W power dissipation
1600pF input capacitance at 100V
-55°C to 150°C operating temperature range
Product Advantages
Excellent power switching performance
Robust design for high reliability
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 800V
Gate-to-source voltage (Vgs): ±30V
On-state resistance (Rds(on)): 260mΩ @ 19.5A, 10V
Drain current (Id): 19.5A continuous at 25°C
Power dissipation (Pd): 40W
Quality and Safety Features
RoHS3 compliant
TO-220FP package for optimal heat dissipation
Compatibility
Suitable for a wide range of high-voltage, high-power applications, such as:
Switch-mode power supplies
Motor drives
Uninterruptible power supplies (UPS)
Industrial automation equipment
Application Areas
High-voltage, high-power switching applications
Power conversion and control systems
Industrial, medical, and consumer electronics
Product Lifecycle
The STF25N80K5 is a current production device. Replacement or upgrade options may be available from STMicroelectronics.
Key Reasons to Choose This Product
Excellent power switching performance with low on-state resistance
Robust design for high reliability in harsh environments
Suitable for a wide range of high-voltage, high-power applications
RoHS3 compliance for environmental safety
Availability and support from a leading semiconductor manufacturer, STMicroelectronics
STF25N80K5 MOSSTMicroelectronics