Manufacturer Part Number
STF24NM60N
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
ROHS3 Compliant
TO-220-3 Full Pack Package
MDmesh II Series
N-Channel MOSFET
600V Drain to Source Voltage
-55°C to 150°C Operating Temperature Range
17A Continuous Drain Current (at 25°C)
190mΩ On-Resistance (at 8A, 10V)
1400pF Input Capacitance (at 50V)
30W Power Dissipation (at Tc)
46nC Gate Charge (at 10V)
Product Advantages
High voltage capability
Low on-resistance
High power density
Suitable for high-frequency switching applications
Key Technical Parameters
Drain to Source Voltage: 600V
Gate to Source Voltage: ±30V
On-Resistance: 190mΩ
Continuous Drain Current: 17A
Input Capacitance: 1400pF
Power Dissipation: 30W
Gate Charge: 46nC
Quality and Safety Features
ROHS3 Compliant
Wide Operating Temperature Range: -55°C to 150°C
Compatibility
Through Hole Mounting
Application Areas
High-frequency switching applications
Power conversion
Motor control
Industrial electronics
Product Lifecycle
Currently available
No information on discontinuation or replacements
Several Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for high efficiency
Compact TO-220 package for space-constrained designs
Suitable for high-frequency, high-power switching applications
Wide operating temperature range for reliable performance
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