Manufacturer Part Number
STF24N60M2
Manufacturer
STMicroelectronics
Introduction
High-performance power MOSFET
Product Features and Performance
600V N-channel power MOSFET
Low on-resistance (RDS(on)) of 190 mΩ
High current capability of 18A (continuous, at 25°C)
Low gate charge (Qg) of 29 nC
Wide operating temperature range of -55°C to 150°C
Suitable for high-frequency and high-efficiency switching applications
Product Advantages
Excellent performance in terms of on-resistance, current capability, and gate charge
Reliable and durable design for demanding applications
Efficient power conversion and reduced energy consumption
Key Technical Parameters
Drain-to-Source Voltage (VDS): 600V
Gate-to-Source Voltage (VGS): ±25V
On-Resistance (RDS(on)): 190 mΩ @ 9A, 10V
Input Capacitance (Ciss): 1060 pF @ 100V
Power Dissipation (Ptot): 30W (at Tc)
Gate Charge (Qg): 29 nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability and safety-critical applications
Compatibility
Suitable for a wide range of power electronics and industrial applications
Application Areas
Switch-mode power supplies (SMPS)
Motor drives
Inverters
Power factor correction (PFC) circuits
Welding equipment
Industrial automation and control systems
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available from STMicroelectronics
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance, high current capability, and low gate charge
Reliable and durable design for demanding applications
RoHS3 compliance for use in a wide range of applications
Compatibility with a variety of power electronics and industrial systems
Continuous availability and access to replacements or upgrades from the manufacturer
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