Manufacturer Part Number
STF23NM60ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in TO-220 package
Product Features and Performance
600V drain-source voltage
Low on-resistance
High current capability
Fast switching speed
Excellent thermal performance
Reliable and robust design
Product Advantages
Suitable for high-voltage, high-current switching applications
Efficient power conversion and control
Improved system efficiency and reliability
Key Technical Parameters
Drain-source voltage (Vdss): 600V
Maximum gate-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 180mΩ @ 10A, 10V
Continuous drain current (Id): 19.5A @ 25°C
Input capacitance (Ciss): 2050pF @ 50V
Power dissipation (Tc): 35W
N-channel MOSFET technology
Quality and Safety Features
RoHS3 compliant
Stringent quality control and testing
Compatibility
Suitable for a wide range of high-power, high-voltage applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in production
No immediate plans for discontinuation
Replacement or upgrade options available from STMicroelectronics
Key Reasons to Choose This Product
Excellent performance and efficiency
Reliable and robust design
Suitable for demanding high-voltage, high-current applications
Cost-effective solution with good value for money
Backed by the expertise and support of STMicroelectronics
STF22NM60N-HSTMicroelectronics
STF2458SAMHOP