Manufacturer Part Number
STF2HNK60Z
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET with low on-resistance and high voltage rating
Product Features and Performance
Robust 600V drain-source voltage rating
Low on-resistance of 4.8Ω at 1A, 10V
Wide operating temperature range of -55°C to 150°C
Fast switching with low gate charge of 15nC at 10V
High current capability of 2A continuous at 25°C
Product Advantages
Excellent power efficiency due to low on-resistance
Reliable performance across wide temperature range
Enables compact and high-density circuit designs
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 4.8Ω @ 1A, 10V
Continuous Drain Current (Id): 2A @ 25°C
Input Capacitance (Ciss): 280pF @ 25V
Power Dissipation: 20W @ Tc
Quality and Safety Features
RoHS3 compliant
Through-hole TO-220FP package for reliable mounting
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Industrial control systems
Lighting ballasts
Home appliances
Product Lifecycle
Current production part
Availability of replacement parts or upgrades may vary
Key Reasons to Choose This Product
Excellent power efficiency and performance
Wide operating temperature range for reliability
Compact and high-density circuit design enablement
Robust 600V voltage rating for high-voltage applications
RoHS3 compliance for environmentally-conscious designs