Manufacturer Part Number
STD6N52K3
Manufacturer
STMicroelectronics
Introduction
High-voltage, N-channel, logic-level, PowerMESH3 MOSFET
Product Features and Performance
Suitable for high-efficiency, high-voltage power conversion applications
Excellent on-state resistance (RDS(on)) performance
Fast switching capability
Rugged avalanche capability
Wide safe operating area (SOA)
Product Advantages
High power density
High efficiency
Improved thermal management
Key Technical Parameters
Drain to Source Voltage (Vdss): 525V
Gate-to-Source Voltage (Vgs): ±30V
On-state Resistance (RDS(on)): 1.2Ω @ 2.5A, 10V
Continuous Drain Current (ID): 5A @ 25°C
Power Dissipation (Tc): 70W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Replacement for previous-generation high-voltage MOSFETs
Application Areas
High-voltage power conversion
Switched-mode power supplies
Motor drives
Lighting ballasts
Industrial and home appliances
Product Lifecycle
Currently available
No discontinuation plans
Key Reasons to Choose This Product
Excellent high-voltage, high-power performance
Efficient thermal management
Proven reliability and safety
Compatibility with existing designs
Cost-effective solution for high-voltage applications