Manufacturer Part Number
STD65N55F3
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET in DPAK package
Product Features and Performance
Robust design for high reliability
Low on-resistance for high efficiency
High current capability up to 80A
Wide operating temperature range of -55°C to 175°C
Product Advantages
Optimized for high-power and high-efficiency applications
Excellent thermal performance in compact DPAK package
Low gate charge for fast switching
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 55V
On-Resistance (Rds(on)): 8.5mΩ @ 32A, 10V
Continuous Drain Current (ID): 80A @ 25°C
Input Capacitance (Ciss): 2200pF @ 25V
Power Dissipation (Ptot): 110W @ Tc
Quality and Safety Features
RoHS3 compliant
DPAK package for reliable surface mount technology
Compatibility
Compatible with a wide range of high-power, high-efficiency applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Electric vehicles
Product Lifecycle
Currently in production, with no plans for discontinuation. Replacements and upgrades available.
Key Reasons to Choose This Product
Excellent performance-to-size ratio with high current capability and low on-resistance
Robust and reliable design for demanding applications
Optimized for high-efficiency and high-power systems
Wide operating temperature range for versatile usage
Compatible with industry-standard DPAK package
STD6317ETXXYSTM