Manufacturer Part Number
STD6N60DM2
Manufacturer
STMicroelectronics
Introduction
This is a discrete semiconductor product, specifically a transistor FET, MOSFET Single.
Product Features and Performance
N-Channel MOSFET
600V Drain to Source Voltage (Vdss)
±25V Gate to Source Voltage (Vgs)
1Ohm Drain-Source On-State Resistance (Rds On) @ 2.5A, 10V
5A Continuous Drain Current (Id) @ 25°C
274pF Input Capacitance (Ciss) @ 100V
60W Power Dissipation (Max) @ Tc
2nC Gate Charge (Qg) @ 10V
Product Advantages
ROHS3 Compliant
Surface Mount Mounting Type
Wide Operating Temperature Range (-55°C to 150°C)
Key Technical Parameters
MOSFET Technology
D-PAK (TO-252) Package
Tape & Reel (TR) Packaging
Quality and Safety Features
ROHS3 Compliant
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 Package
Application Areas
Suitable for a variety of power electronics applications
Product Lifecycle
This is an active product, not nearing discontinuation.
Replacements and upgrades may be available.
Key Reasons to Choose This Product
Excellent performance characteristics, including high voltage, low on-resistance, and high current handling
Compact and reliable D-PAK surface mount package
Wide operating temperature range
ROHS3 compliance for environmental safety
STD6N10T4STMicroelectronics