Manufacturer Part Number
STD6N90K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-Channel MOSFET
Product Features and Performance
900V drain-to-source voltage rating
Ultra-low on-resistance
High power dissipation capability
Low gate charge for high-frequency applications
Suitable for high-voltage switch-mode power supplies, motor drives, and other industrial applications
Product Advantages
Optimized for high-efficiency power conversion
Excellent switching performance
Robust design for reliable operation
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 900V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.1Ω @ 3A, 10V
Continuous Drain Current (Id): 6A @ 25°C (Tc)
Power Dissipation (Pd): 110W @ 25°C (Tc)
Operating Temperature: -55°C to 150°C (Tj)
Quality and Safety Features
RoHS3 compliant
DPAK package for high power density
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial electronics
Automotive electronics
Product Lifecycle
Active product
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent high-voltage performance
Ultra-low on-resistance for high efficiency
High power dissipation capability
Robust design for reliable operation
Suitable for a wide range of industrial and automotive applications
STD6A60
STD6N10 MOSSTMicroelectronics