Manufacturer Part Number
STD6N95K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-power density N-channel power MOSFET in DPAK package
Product Features and Performance
High voltage rating up to 950V
Low on-resistance down to 1.25Ω
High current handling up to 9A
Wide operating temperature range from -55°C to 150°C
Fast switching with low gate charge of 13nC
Rugged and reliable MOSFET technology
Product Advantages
Optimized for high-voltage, high-power density applications
Excellent thermal performance in DPAK package
Efficient power conversion with low conduction and switching losses
Robust design for reliable operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 950V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.25Ω @ 3A, 10V
Continuous Drain Current (Id): 9A @ 25°C
Input Capacitance (Ciss): 450pF @ 100V
Power Dissipation (Ptot): 90W @ Tc
Quality and Safety Features
RoHS3 compliant
DPAK package for efficient thermal management
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Welding equipment
Induction heating
Industrial and consumer electronics
Product Lifecycle
Current production, no plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose
Excellent performance-to-cost ratio
Robust and reliable design for demanding applications
Easy to integrate with efficient thermal management
Broad compatibility and suitability for various use cases
STD6NF10STMicroelectronics