Manufacturer Part Number
STD6N62K3
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor
Designed for high-voltage, high-power switching applications
Product Features and Performance
Operating voltage up to 620V
Continuous drain current up to 5.5A
Low on-resistance of 1.28Ω
Fast switching speed and low gate charge
Robust design with high ruggedness and reliability
Product Advantages
High efficiency and low power dissipation
Compact DPAK package for space-saving design
Suitable for high-voltage, high-power applications
Excellent thermal management capabilities
Key Technical Parameters
Drain-to-source voltage (Vdss): 620V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 1.28Ω @ 2.8A, 10V
Continuous drain current (Id): 5.5A @ 25°C
Input capacitance (Ciss): 706pF @ 50V
Power dissipation (Tc): 90W
Quality and Safety Features
RoHS3 compliant
Robust and reliable design for high-voltage, high-power applications
Compatibility
Suitable for a wide range of high-voltage, high-power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Industrial and consumer electronics
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades available from the manufacturer
Several Key Reasons to Choose This Product
High voltage and current capabilities
Low on-resistance for high efficiency
Fast switching speed and low gate charge for improved performance
Compact DPAK package for space-saving design
Robust and reliable design for high-voltage, high-power applications
Excellent thermal management capabilities
RoHS3 compliance for environmental responsibility
STD6A60