Manufacturer Part Number
STD6N65M2
Manufacturer
STMicroelectronics
Introduction
The STD6N65M2 is a high-performance N-channel MOSFET transistor designed for a wide range of power conversion applications.
Product Features and Performance
650V drain-to-source voltage rating
35Ω maximum on-resistance at 2A, 10V
4A continuous drain current at 25°C
Low input capacitance of 226pF at 100V
60W maximum power dissipation
Product Advantages
Excellent energy efficiency due to low on-resistance
High voltage handling capability
Suitable for high-power applications
Compact DPAK surface-mount package
Key Technical Parameters
Drain-to-source voltage (Vdss): 650V
Gate-to-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 1.35Ω @ 2A, 10V
Continuous drain current (Id): 4A @ 25°C
Input capacitance (Ciss): 226pF @ 100V
Power dissipation (Pd): 60W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation (-55°C to 150°C)
Compatibility
DPAK (TO-252-3) surface-mount package
Application Areas
Switch-mode power supplies
Motor drives
Industrial and consumer electronics
Lighting applications
Product Lifecycle
Currently in production
Replacement and upgrade options available
Key Reasons to Choose
Excellent energy efficiency and power handling
Compact and reliable DPAK package
Suitable for high-voltage, high-current applications
Long-term availability and support from STMicroelectronics
STD6N10 MOSSTMicroelectronics
STD6NF10-1VBsemi