Manufacturer Part Number
STB100NF04T4
Manufacturer
STMicroelectronics
Introduction
High-performance MOSFET transistor designed for a variety of power applications
Product Features and Performance
N-channel MOSFET with a maximum drain-source voltage of 40V
Low on-resistance of 4.6 milliohms at 50A, 10V
Continuous drain current of 120A at 25°C case temperature
Wide operating temperature range from -55°C to 175°C
Fast switching performance with low gate charge of 150nC at 10V
Product Advantages
Excellent thermal and electrical characteristics for efficient power conversion
Robust design suitable for demanding automotive and industrial applications
Compliant with RoHS3 requirements for environmentally-friendly manufacturing
Key Technical Parameters
Drain-source voltage (Vdss): 40V
Maximum gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 4.6 milliohms @ 50A, 10V
Continuous drain current (Id): 120A @ 25°C case temperature
Input capacitance (Ciss): 5100pF @ 25V
Quality and Safety Features
Automotive-qualified AEC-Q101 standard
Robust package design (D2PAK) for high reliability
Compliant with RoHS3 environmental regulations
Compatibility
Suitable for a wide range of power conversion and control applications, including motor drives, power supplies, and inverters
Application Areas
Automotive systems (e.g., electric power steering, engine control, transmission control)
Industrial equipment (e.g., motor drives, power supplies, inverters)
Renewable energy systems (e.g., solar inverters, wind turbine converters)
Product Lifecycle
Currently in active production
No known plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
Excellent thermal and electrical performance for efficient power conversion
Robust design and automotive-qualified reliability for demanding applications
Environmentally-friendly manufacturing with RoHS3 compliance
Broad compatibility and suitability for a wide range of power electronics applications