Manufacturer Part Number
STB10N60M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET with 600V rating and low on-resistance.
Product Features and Performance
600V drain-to-source voltage rating
Low on-resistance of 600mΩ @ 3A, 10V
Continuous drain current of 7.5A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 13.5nC @ 10V
Product Advantages
Excellent efficiency and power density
Robust and reliable performance
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 600mΩ @ 3A, 10V
Drain Current (Id): 7.5A at 25°C
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) package for efficient heat dissipation
Suitable for surface mount applications
Compatibility
Compatible with various high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial automation
Renewable energy systems
Product Lifecycle
This product is actively supported and not nearing discontinuation.
Replacements and upgrades may be available.
Key Reasons to Choose This Product
Excellent efficiency and power density
Robust and reliable performance
Wide operating temperature range
Fast switching speed and low gate charge
Suitable for high-voltage, high-power applications