Manufacturer Part Number
STB100NF03L-03T4
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET transistor
Part of the STripFET III series
Product Features and Performance
Drain to Source Voltage (Vdss) of 30V
Operating Temperature range of -55°C to 175°C
Continuous Drain Current (Id) of 100A at 25°C case temperature
Low On-Resistance (Rds(on)) of 3.2mΩ @ 50A, 10V
High Power Dissipation Capability of 300W at Tc
Input Capacitance (Ciss) of 6200pF @ 25V
Gate Charge (Qg) of 88nC @ 5V
Product Advantages
Excellent thermal and electrical performance
High power density and efficiency
Suitable for high-current, high-power applications
Key Technical Parameters
FET Type: N-Channel MOSFET
Vgs(th) (Max) @ Id: 2.5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Quality and Safety Features
RoHS3 Compliant
Manufactured in a controlled environment
Compatibility
Surface Mount Package: TO-263-3, DPak (2 Leads + Tab), TO-263AB
Application Areas
Switch-Mode Power Supplies (SMPS)
Motor Drives
Inverters
Converters
Industrial and Automotive Electronics
Product Lifecycle
Currently in production
Suitable replacement or upgrade models available
Several Key Reasons to Choose This Product
Exceptional thermal and electrical performance
High power density and efficiency
Suitable for a wide range of high-current, high-power applications
RoHS3 compliant for environmental safety
Proven reliability and quality from STMicroelectronics