Manufacturer Part Number
STB100N10F7
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Suitable for high-power switching applications
Product Features and Performance
Wide operating temperature range: -55°C to 175°C
High drain-source breakdown voltage: 100V
Low on-resistance: 8mΩ @ 40A, 10V
High continuous drain current: 80A @ 25°C
Low gate charge: 61nC @ 10V
Low input capacitance: 4369pF @ 50V
High power dissipation: 150W @ Tc
Product Advantages
Excellent thermal performance
High reliability and ruggedness
Optimized for high-efficiency power conversion
Suitable for high-power switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 8mΩ @ 40A, 10V
Continuous Drain Current (Id): 80A @ 25°C
Input Capacitance (Ciss): 4369pF @ 50V
Power Dissipation (Pd): 150W @ Tc
Quality and Safety Features
RoHS3 compliant
Halogen-free package
Compatibility
Suitable for a wide range of high-power switching applications, such as power supplies, motor drives, and industrial controls
Application Areas
High-power switching applications
Power supplies
Motor drives
Industrial controls
Product Lifecycle
Current product, no discontinuation or replacement plans
Several Key Reasons to Choose This Product
Excellent thermal performance and high reliability
Optimized for high-efficiency power conversion
Wide operating temperature range and high power dissipation
Suitable for a variety of high-power switching applications
RoHS3 compliance and halogen-free package