Manufacturer Part Number
STB100N6F7
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET for high-efficiency switching applications
Product Features and Performance
100A continuous drain current at 25°C
60V drain-to-source voltage
6 mOhm maximum on-resistance at 50A, 10V
1980 pF maximum input capacitance at 25V
125W maximum power dissipation at 25°C
Product Advantages
Low on-resistance for high efficiency
High current handling capability
High power density
Fast switching performance
Key Technical Parameters
MOSFET technology
N-channel FET type
±20V maximum gate-to-source voltage
4V maximum gate threshold voltage at 250A
10V drive voltage for minimum/maximum on-resistance
Quality and Safety Features
RoHS3 compliant
DPAK (TO-263) package
Compatibility
Suitable for high-efficiency switching applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Product Lifecycle
This product is currently in production and is not near discontinuation.
Replacement or upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
High current handling and low on-resistance for improved efficiency
Compact DPAK (TO-263) package for space-constrained designs
Fast switching performance for high-frequency applications
Reliable operation over a wide temperature range (-55°C to 175°C)
RoHS3 compliance for environmental friendliness