Manufacturer Part Number
STB10LN80K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel power MOSFET
Product Features and Performance
800V drain-source voltage
Very low on-resistance
Fast switching speed
Low gate charge
High current capability
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent performance for high-voltage, high-power applications
Efficient power conversion and control
Reliable and robust design
Key Technical Parameters
Drain-source voltage (Vdss): 800V
Gate-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 630mΩ @ 4A, 10V
Continuous drain current (Id): 8A @ 25°C
Input capacitance (Ciss): 427pF @ 100V
Power dissipation (Pd): 110W @ Tc
Quality and Safety Features
RoHS3 compliant
Robust packaging (DPAK/TO-263)
Compatibility
Compatible with a wide range of high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Welding equipment
Industrial controls
Product Lifecycle
Current product, no discontinuation or replacement planned
Several Key Reasons to Choose This Product
Excellent high-voltage, high-current performance
Efficient power conversion and control
Reliable and robust design
Wide operating temperature range
RoHS3 compliance for environmental safety