STB10N95K5 - STMicroelectronics

Manufacturer Part Number

STB10N95K5

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel power MOSFET with extremely low on-resistance and high breakdown voltage.

Product Features and Performance

Very low on-resistance: 800 mOhm @ 4A, 10V

High breakdown voltage: 950V

Wide operating temperature range: -55°C to 150°C

Low gate charge: 22 nC @ 10V

High continuous drain current: 8A @ 25°C

Product Advantages

Excellent efficiency and power density

Reliable performance in high-voltage applications

Wide operating temperature range

Compact DPAK (TO-263) package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 950V

Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 800 mOhm @ 4A, 10V

Drain Current (Id): 8A @ 25°C

Input Capacitance (Ciss): 630 pF @ 100V

Gate Charge (Qg): 22 nC @ 10V

Quality and Safety Features

ROHS3 compliant

Reliable MOSFET technology

Compatibility

Compatible with a wide range of high-voltage, high-power applications.

Application Areas

Switching power supplies

Motor drives

Industrial/automotive electronics

Lighting ballasts

Inverters

Product Lifecycle

This product is currently in production and available. No information on discontinuation or upgrades.

Key Reasons to Choose This Product

Excellent efficiency and power density

High breakdown voltage for reliable high-voltage operation

Wide operating temperature range for use in harsh environments

Compact DPAK (TO-263) package for space-constrained designs

Proven MOSFET technology for reliable performance