Manufacturer Part Number
2STR2230
Manufacturer
STMicroelectronics
Introduction
High-performance PNP bipolar junction transistor (BJT) suitable for a wide range of general-purpose applications.
Product Features and Performance
High current capability up to 1.5A
High transition frequency of 100MHz
Low collector-emitter saturation voltage of 800mV @ 200mA, 2A
Wide operating temperature range of -65°C to 150°C
Compact surface-mount SOT-23-3 package
Product Advantages
Excellent power handling and switching capabilities
High-speed operation for efficient performance
Low power loss and thermal management
Versatile package for space-constrained designs
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 30V
Collector Current (Max): 1.5A
DC Current Gain (hFE) (Min): 170 @ 500mA, 2V
Power Dissipation (Max): 500mW
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Reliable and robust construction for long-term use
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
General-purpose amplifier and switching applications
Power supplies, converters, and regulators
Automotive electronics and industrial control systems
Product Lifecycle
Current product offering, not nearing discontinuation
Replacement and upgrade options available from the manufacturer
Key Reasons to Choose
High-performance and reliable transistor for demanding applications
Compact surface-mount package for efficient board space utilization
Wide operating temperature range for use in diverse environments
RoHS compliance for environmentally-conscious designs