Manufacturer Part Number
2STN2540
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Bipolar Junction Transistor (BJT), PNP type
Product Features and Performance
Designed for general-purpose amplification and switching applications
Capable of handling up to 5A of collector current
Breakdown voltage of up to 40V between collector and emitter
Saturation voltage as low as 450mV @ 500mA, 5A
DC current gain (hFE) of at least 150 @ 2A, 2V
Product Advantages
Compact SOT-223 surface mount package
RoHS3 compliant for environmentally-friendly use
Reliable performance in a wide temperature range up to 150°C
Key Technical Parameters
Power rating: 1.6W
Collector-Emitter Breakdown Voltage (VCEO): 40V
Collector Current (IC): 5A
Collector Cut-off Current (ICBO): 100nA
DC Current Gain (hFE): Minimum 150 @ 2A, 2V
Quality and Safety Features
Fully RoHS3 compliant
Reliable operation within the specified temperature range
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
General-purpose amplification and switching in electronic devices
Suitable for use in power supplies, motor controls, and other power electronics
Product Lifecycle
Current production model, no indication of discontinuation
Replacements and upgrades may be available from the manufacturer
Key Reasons to Choose This Product
Robust performance with high current handling capability
Compact and efficient surface mount packaging
Compliance with the latest RoHS environmental regulations
Reliable operation in a wide temperature range