Manufacturer Part Number
2STN1550
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Single
Product Features and Performance
RoHS3 Compliant
SOT-223 Package
Operating Temperature: 150°C (TJ)
Power Rating: 1.6 W (Max)
Collector-Emitter Breakdown Voltage: 50 V (Max)
Collector Current: 5 A (Max)
Collector Cutoff Current: 100 nA (Max)
Collector-Emitter Saturation Voltage: 450 mV @ 300 mA, 3 A
DC Current Gain (hFE): 135 (Min) @ 2 A, 2 V
Surface Mount Mounting
Product Advantages
High power handling capability
Compact SOT-223 package
Wide operating temperature range
Robust electrical characteristics
Key Technical Parameters
Transistor Type: NPN
Package: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Packaging: Tape & Reel (TR)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various electronic circuit applications
Application Areas
Suitable for use in power amplifiers, switching circuits, and other electronic systems
Product Lifecycle
Currently available product
No information on discontinuation or replacement
Key Reasons to Choose This Product
High power handling capability
Compact package
Wide operating temperature range
Robust electrical performance
RoHS3 compliance for environmental safety