2STN1360 - STMicroelectronics

Manufacturer Part Number

2STN1360

Manufacturer

STMicroelectronics

Introduction

Single NPN bipolar junction transistor (BJT)

Designed for general-purpose amplification and switching applications

Product Features and Performance

Supports high collector current up to 3A

Operates at high voltage up to 60V

Offers high DC current gain (hFE) of at least 160

Achieves high transition frequency of 130MHz

Compact surface mount SOT-223 package

Product Advantages

Excellent power handling capability

High reliability and robustness

Compact size for space-constrained designs

Suitable for a wide range of applications

Key Technical Parameters

Power Dissipation: 1.6W

Junction Temperature: 150°C

Collector-Emitter Breakdown Voltage: 60V

Collector Current (Max): 3A

Collector Cutoff Current: 100nA

Collector-Emitter Saturation Voltage: 500mV

Quality and Safety Features

RoHS3 compliant

Stable and reliable performance

Designed for long-term operation

Compatibility

Compatible with TO-261-4, TO-261AA package footprints

Suitable for surface mount assembly

Application Areas

General-purpose amplification and switching circuits

Power management and control systems

Automotive electronics

Industrial automation and control

Product Lifecycle

Currently in active production

Replacement or upgraded models may be available in the future

Key Reasons to Choose This Product

High power handling and voltage capability

Excellent high-frequency performance

Robust and reliable design

Compact surface mount package

Suitable for a wide range of applications