2STF2340 - STMicroelectronics

Manufacturer Part Number

2STF2340

Manufacturer

STMicroelectronics

Introduction

This product is a PNP bipolar junction transistor (BJT) suitable for a wide range of applications, including power amplifiers, switches, and regulators.

Product Features and Performance

Operating temperature range up to 150°C

Power dissipation of up to 1.4 W

Collector-emitter breakdown voltage of up to 40 V

Collector current (Ic) of up to 3 A

Collector cutoff current (ICBO) of up to 100 nA

Low collector-emitter saturation voltage (Vce Sat) of 350 mV @ 150 mA, 3 A

High DC current gain (hFE) of at least 180 @ 1 A, 2 V

Transition frequency of 100 MHz

Product Advantages

Robust performance in high-temperature environments

Ability to handle high power and current levels

Low saturation voltage for efficient power switching

Suitable for high-frequency applications

Key Technical Parameters

Power dissipation: 1.4 W

Collector-emitter breakdown voltage: 40 V

Collector current (Ic): 3 A

Collector cutoff current (ICBO): 100 nA

Collector-emitter saturation voltage (Vce Sat): 350 mV @ 150 mA, 3 A

DC current gain (hFE): 180 @ 1 A, 2 V

Transition frequency: 100 MHz

Quality and Safety Features

RoHS3 compliant

Housed in a SOT-89-3 surface mount package

Compatibility

This transistor is suitable for a wide range of electronic applications, including power amplifiers, switches, and regulators.

Application Areas

Power amplifiers

Switches

Regulators

General-purpose transistor applications

Product Lifecycle

This product is currently in active production and availability. No plans for discontinuation have been announced at this time.

Key Reasons to Choose This Product

Robust high-temperature performance

Ability to handle high power and current levels

Low saturation voltage for efficient power switching

Suitable for high-frequency applications

RoHS3 compliance for environmental sustainability

Compact surface mount package for efficient board layout