Manufacturer Part Number
2STF2360
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
SOT-89-3 Package
Operating Temperature: 150°C (TJ)
Power Rating: 1.4W
Collector-Emitter Breakdown Voltage: 60V
Collector Current (Max): 3A
Collector Cutoff Current (Max): 100nA
Collector-Emitter Saturation Voltage: 500mV @ 150mA, 3A
Transistor Type: PNP
DC Current Gain (hFE): 160 Min. @ 1A, 2V
Transition Frequency: 130MHz
Surface Mount Mounting
Product Advantages
High Power Handling Capability
Fast Switching Speed
Compact Surface Mount Package
Key Technical Parameters
Power Rating: 1.4W
Collector-Emitter Breakdown Voltage: 60V
Collector Current (Max): 3A
Transition Frequency: 130MHz
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a variety of electronic applications
Application Areas
Suitable for use in power amplifiers, switches, and other electronic circuits
Product Lifecycle
Currently available, no discontinuation or replacement information known
Key Reasons to Choose This Product
High power handling capability
Fast switching speed
Compact surface mount package
RoHS3 compliance for environmental safety