2STF2550 - STMicroelectronics

Manufacturer Part Number

2STF2550

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

RoHS3 Compliant

Surface Mount Packaging (SOT-89-3)

Operating Temperature up to 150°C

Power Handling Capacity up to 1.4W

Collector-Emitter Breakdown Voltage up to 50V

Collector Current up to 5A

Low Collector Cutoff Current (100nA max)

Low Collector-Emitter Saturation Voltage (550mV max)

High DC Current Gain (110 min) at 2A, 2V

Product Advantages

Robust and reliable performance

Compact surface mount package

Efficient power handling

Suitable for high-current applications

Key Technical Parameters

Transistor Type: PNP

Package / Case: TO-243AA (SOT-89-3)

Mounting Type: Surface Mount

Collector-Emitter Breakdown Voltage: 50V (max)

Collector Current: 5A (max)

Collector Cutoff Current: 100nA (max)

Collector-Emitter Saturation Voltage: 550mV (max)

DC Current Gain: 110 (min) at 2A, 2V

Quality and Safety Features

RoHS3 Compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of electronic circuits and applications

Application Areas

Power supplies

Motor drives

Switching circuits

Amplifier circuits

Industrial electronics

Product Lifecycle

Currently in active production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Reliable and robust performance

Efficient power handling capability

Compact surface mount packaging

Wide operating temperature range

Suitable for high-current applications

Compliant with RoHS3 environmental regulations