Manufacturer Part Number
2STR1160
Manufacturer
STMicroelectronics
Introduction
NPN Bipolar Junction Transistor (BJT)
Product Features and Performance
Designed for general-purpose amplifier and switching applications
High collector-emitter breakdown voltage
Low collector-emitter saturation voltage
High current gain
Product Advantages
Robust and reliable performance
Compact surface mount packaging
Suitable for a wide range of applications
Key Technical Parameters
Package: SOT-23-3
Operating Temperature: 150°C (TJ)
Power Rating: 500 mW
Collector-Emitter Breakdown Voltage: 60 V
Collector Current (Max): 1 A
Collector Cutoff Current: 100 nA (ICBO)
Collector-Emitter Saturation Voltage: 430 mV @ 100 mA, 1 A
DC Current Gain (hFE): 180 @ 500 mA, 2 V
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Suitable for a wide range of general-purpose amplifier and switching applications
Application Areas
Consumer electronics
Industrial control
Power supplies
Telecommunications equipment
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose This Product
Robust and reliable performance
Compact surface mount packaging
Wide operating temperature range
Suitable for a variety of applications
Cost-effective solution