2STR2160 - STMicroelectronics

Manufacturer Part Number

2STR2160

Manufacturer

STMicroelectronics

Introduction

The 2STR2160 is a single Bipolar Junction Transistor (BJT) in a compact Surface Mount (SMT) package.

Product Features and Performance

PNP transistor type

Compact SOT-23-3 package

Collector-Emitter Breakdown Voltage (VCEO) up to 60V

Collector Current (IC) up to 1A

Power Dissipation up to 500mW

High DC Current Gain (hFE) of at least 180 @ 500mA, 2V

Low Collector-Emitter Saturation Voltage (VCEsat) of 480mV @ 100mA, 1A

Operating Temperature range up to 150°C

Product Advantages

Compact and space-saving SMT package

High power handling capability

Excellent electrical performance

Suitable for a wide range of applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 60V

Collector Current (IC): 1A

Power Dissipation: 500mW

DC Current Gain (hFE): Minimum 180 @ 500mA, 2V

Collector-Emitter Saturation Voltage (VCEsat): 480mV @ 100mA, 1A

Quality and Safety Features

RoHS3 compliant

Qualified for industrial and automotive applications

Compatibility

Suitable for a wide range of electronic circuits and systems

Application Areas

Amplifiers

Switches

Power supplies

Motor drivers

General purpose electronics

Product Lifecycle

Currently in active production

No known plans for discontinuation

Availability of compatible replacement parts

Key Reasons to Choose This Product

Excellent electrical performance and power handling

Compact and space-saving SMT package

Proven reliability and quality for industrial and automotive applications

Suitable for a wide range of electronic circuit designs