LM5109MAX - Texas Instruments

Manufacturer Part Number

LM5109MAX

Manufacturer

Texas Instruments

Introduction

The LM5109MAX is a gate driver specifically designed for power management applications, offering efficient control of N-Channel MOSFETs in a half-bridge configuration.

Product Features and Performance

Efficient driving of N-Channel MOSFET gates in a half-bridge setup

Independent driving channels for versatile applications

Supports a supply voltage range from 8V to 14V

Non-inverting input type for straightforward integration

Capable of delivering peak output currents of 1A both in sourcing and sinking conditions

Features quick rise and fall times of approximately 15ns for improved switching performance

Operates across a wide temperature range from -40°C to 125°C

Product Advantages

The integration of independent driving channels allows for flexible circuit design.

Quick rise and fall times enhance the switching efficiency, reducing power losses.

Wide operating temperature range ensures reliability under various environmental conditions.

Key Technical Parameters

Driven Configuration: Half-Bridge

Channel Type: Independent

Number of Drivers: 2

Gate Type: N-Channel MOSFET

Voltage Supply: 8V ~ 14V

Logic Voltage VIL, VIH: 0.8V, 2.2V

Current Peak Output (Source, Sink): 1A, 1A

High Side Voltage Max (Bootstrap): 118 V

Rise / Fall Time (Typ): 15ns, 15ns

Operating Temperature: -40°C ~ 125°C (TJ)

Quality and Safety Features

Designed following industry-standard quality and safety principles, ensuring reliable operation.

Compatibility

Suitable for driving N-Channel MOSFETs, compatible with various power management circuits.

Application Areas

Specifically designed for power management applications including DC-DC converters, motor controllers, and renewable energy systems.

Product Lifecycle

Classified as Obsolete, indicating the end of its production life. Users should consider seeking replacements or upgrades for future projects.

Several Key Reasons to Choose This Product

High-efficiency MOSFET driving capability improves overall system power efficiency.

Fast switching times reduce power losses and improve performance.

Wide operating temperature range ensures robust performance under challenging conditions.

Obsolescence status necessitates careful consideration for long-term projects, with potential for specialized applications where upgrade or replacement is not immediately required.