Manufacturer Part Number
LM5109BSD
Manufacturer
Texas Instruments
Introduction
The LM5109BSD is a high voltage gate driver designed for driving N-Channel MOSFETs in a half-bridge configuration.
Product Features and Performance
High voltage operation capability
Dual independent drivers
Fast rise and fall times (15ns typical)
Robust 1A peak output source/sink current
Integrated bootstrap diode
Product Advantages
Capable of driving high side N-Channel MOSFET at voltage up to 108V
Efficient power management for half-bridge configurations
Suitable for high frequency switching applications
Key Technical Parameters
Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 8V ~ 14V
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 108V
Rise / Fall Time (Typ): 15ns
Operating Temperature: -40°C ~ 125°C (TJ)
Quality and Safety Features
Built to withstand high voltage and temperature ranges
Surface mount design meets industry standards for quality and reliability
Compatibility
The gate driver is compatible with surface mount technology and specifically designed for N-Channel MOSFETs.
Application Areas
Switch mode power supplies
Motor controllers
Power inverters
High frequency switching power circuits
Product Lifecycle
The product status is obsolete, suggesting limited availability and the potential need for customers to look for replacements or upgrades.
Several Key Reasons to Choose This Product
Optimized for high side N-Channel MOSFET control with integrated bootstrap diode
Reliable power management for demanding applications due to robust peak output current and high voltage rating
Fast switching performance with 15ns rise/fall time catering to efficiency requirements
Adaptability to harsh environments with a wide operating temperature range
Suitable for compact designs with its 8-WDFN Exposed Pad package