LM5109BQNGTTQ1 - Texas Instruments

Manufacturer Part Number

LM5109BQNGTTQ1

Manufacturer

Texas Instruments

Introduction

High-voltage gate driver for N-Channel MOSFETs

Product Features and Performance

High side voltage up to 108 V

Dual independent half-bridge driver

Peak output source and sink current 1A

Fast rise and fall times of 15ns

Supply voltage range from 8V to 14V

Non-inverting input

Supports N-Channel MOSFETs

Automotive grade

Qualified to AEC-Q100 standards

Product Advantages

High efficiency with fast switching speeds

Robust for automotive environments

Compact 8-WDFN exposed pad package

Can drive high-voltage MOSFETs safely

Key Technical Parameters

Driven Configuration: Half-Bridge

Number of Drivers: 2

Gate Type: N-Channel MOSFET

Voltage - Supply: 8V ~ 14V

Logic Voltage - VIL, VIH: 0.8V, 2.2V

Current - Peak Output (Source, Sink): 1A

High Side Voltage - Max (Bootstrap): 108 V

Rise / Fall Time (Typ): 15ns

Operating Temperature: -40°C ~ 125°C (TJ)

Quality and Safety Features

Operational temperature range from -40°C to 125°C

Compliance with AEC-Q100 automotive standards

Compatibility

Designed for use with N-Channel MOSFET gate driving

Application Areas

Automotive power management

Electronic power transmission systems

Power inverters and converters

Motor control circuits

Product Lifecycle

Active status

Long-term availability for automotive applications

Several Key Reasons to Choose This Product

Low propagation delay ensures high-speed operation

Enhanced robustness for automotive applications

Efficient power management with low supply voltage range

AEC-Q100 qualification for reliability in automotive applications

Easily integrated into existing designs with surface mount packaging

Support for high-voltage applications up to 108V