Manufacturer Part Number
LM5110-2M
Manufacturer
Texas Instruments
Introduction
The LM5110-2M is a low-side gate driver designed for driving N-Channel MOSFETs in power management applications.
Product Features and Performance
Independently drives 2 channels
Optimized for N-Channel MOSFET gate driving
Peak output current of 3A (source), 5A (sink)
Fast rise and fall times (Typical 14ns/12ns)
Wide supply voltage range from 3.5V to 14V
Inverting input type
Supports logic-level thresholds with VIL at 0.8V and VIH at 2.2V
Designed for surface mount technology with 8-SOIC package
Product Advantages
Flexible power supply range to accommodate various applications
Strong drive capability for fast switching and reduced power loss
Compact 8-SOIC package saves space on PCBs
Key Technical Parameters
Logic Voltage VIL, VIH: 0.8V, 2.2V
Voltage Supply: 3.5V ~ 14V
Current Peak Output (Source, Sink): 3A, 5A
Rise / Fall Time (Typ): 14ns, 12ns
Quality and Safety Features
Operating Temperature range: -40°C ~ 125°C, suitable for harsh environments
Compatibility
Applicable to gate driving of N-Channel MOSFETs
Surface mount compatible with 8-SOIC packaging
Application Areas
Motor control
Power supply regulation
Power converters
Automotive electronics
Industrial systems
Product Lifecycle
Obsolete status indicates that the product is no longer being manufactured or purchased
Alternative solutions or upgrades may be offered by Texas Instruments
Several Key Reasons to Choose This Product
Texas Instruments' reputation for quality and reliability in power management
High-current driving capability enables efficient operation of power circuits
Broad voltage range ensures compatibility with a wide range of MOSFET gates
The small form factor for compact and efficient PCB layout
Fast switching capabilities for high-performance applications