Manufacturer Part Number
LM5110-3MX
Manufacturer
Texas Instruments
Introduction
Low-side gate driver designed for driving N-Channel MOSFETs
Product Features and Performance
Dual independent drivers
Peak output current (source): 3A
Peak output current (sink): 5A
Supply voltage range: 3.5V to 14V
Logic input thresholds VIL: 0.8V, VIH: 2.2V
Fast rise/fall times: 14ns/12ns
Operating Temperature: -40°C to 125°C (TJ)
Product Advantages
Capable of driving high-speed MOSFETs
Dual channel allows for flexibility in application
High peak current capability enables efficient switching
Fast switching speeds reduce transition losses
Key Technical Parameters
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Gate Type: N-Channel MOSFET
Voltage - Supply: 3.5V to 14V
Current - Peak Output: 3A (Source), 5A (Sink)
Input Type: Inverting, Non-Inverting
Rise/Fall Time: 14ns/12ns
Operating Temperature Range: -40°C to 125°C
Quality and Safety Features
Extended operating temperature range suitable for demanding applications
Compatibility
Surface mount compatible for modern PCB assembly
Designed for N-Channel MOSFETs
Application Areas
Power management for various electronics
Motor control circuits
Switch mode power supply (SMPS) systems
Product Lifecycle
Obsolete – may have limited availability
Consult for replacement options or upgrade paths
Several Key Reasons to Choose This Product
High current driving capability enhances performance of power systems
Dual independent channels provide design versatility
Suitable for high-temperature environments, ensuring reliability
Swift rise and fall times improve overall efficiency
Texas Instruments' reputation for quality and robust support infrastructure