LM5110-2SD - Texas Instruments

Manufacturer Part Number

LM5110-2SD

Manufacturer

Texas Instruments

Introduction

High-performance dual N-channel MOSFET gate driver

Designed for a wide range of power applications

Product Features and Performance

Supports 3.5V to 14V supply voltage

Independent channel configuration

3A peak source, 5A peak sink current capability

14ns rise time, 12ns fall time

Undervoltage lockout (UVLO) protection

Thermal shutdown protection

Product Advantages

Optimized for driving N-channel MOSFETs

Compact 10-pin WSON (4x4) package

Wide operating temperature range of -40°C to 125°C

Key Technical Parameters

Supply Voltage Range: 3.5V to 14V

Peak Source Current: 3A

Peak Sink Current: 5A

Rise/Fall Time: 14ns/12ns

Operating Temperature Range: -40°C to 125°C

Quality and Safety Features

Thermal shutdown protection

Undervoltage lockout (UVLO) protection

Compatibility

Suitable for driving a wide range of N-channel MOSFETs in various power applications

Application Areas

Switching power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

This product is currently in production and is not nearing discontinuation.

Replacements or upgrades may be available in the future as technology advances.

Key Reasons to Choose This Product

High-performance dual gate driver with independent channel configuration

Optimized for driving N-channel MOSFETs

Compact package and wide operating temperature range

Robust protection features like thermal shutdown and UVLO

Suitable for a variety of power applications