Manufacturer Part Number
LM5111-1M
Manufacturer
Texas Instruments
Introduction
The LM5111-1M is a dual low-side gate driver specifically designed to drive N-Channel MOSFETs used in power management applications.
Product Features and Performance
Independent dual-channel gate driver for N-Channel MOSFETs
Non-inverting input type
Peak output currents of 3A source and 5A sink
Fast rise and fall times of 14ns and 12ns respectively
Wide supply voltage range from 3.5V to 14V
Logic threshold voltages are 0.8V VIL and 2.2V VIH
Operates across a wide temperature range, -40°C to 125°C
Product Advantages
Enables high efficiency with fast switching capabilities
Suitable for high temperature environments
Provides robust drive to MOSFET gates with high current capacity
Flexibility in system voltages accommodates various applications
Key Technical Parameters
Supply Voltage: 3.5V ~ 14V
Logic Voltage VIL, VIH: 0.8V, 2.2V
Current Peak Output (Source, Sink): 3A, 5A
Temperature Range: -40°C ~ 125°C
Package Type: 8-SOIC
Quality and Safety Features
Built to operate under extreme temperature conditions
Delivers stable performance across varying electrical loads
Compatibility
Optimal for driving low-side N-Channel MOSFETs
Suitable for use in systems where the power supply ranges from 3.5V to 14V
Application Areas
Power supply circuits
Motor control systems
Automated test equipment
High power LED driver applications
Product Lifecycle
Status: Obsolete
Availability of replacement or upgrade options should be checked with Texas Instruments
Several Key Reasons to Choose This Product
High drive current capacity enhances switching performance of MOSFETs
Rapid switching speeds result in more efficient power management
Robust design permits use in a wide variety of challenging environments
Wide logic threshold compatibility makes integration easier in mixed logic systems
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