Manufacturer Part Number
LM5111-1MY
Manufacturer
Texas Instruments
Introduction
The LM5111-1MY is an obsolete low-side dual gate driver designed for driving N-channel MOSFETs.
Product Features and Performance
Dual independent channels
Designed for low-side gate driving N-Channel MOSFETs
Supply voltage range from 3.5V to 14V
Logic input threshold of VIL 0.8V and VIH 2.2V
Output current capability of 3A source and 5A sink
Typical rise and fall times of 14ns and 12ns, respectively
Operating temperatures range from -40°C to 125°C
Surface-mount technology in a power TSSOP package
Product Advantages
Strong drive current capability for robust gate switching
Fast switching times enhance efficiency
Wide operating voltage and temperature ranges bolster usability across various applications
Key Technical Parameters
Independent driving channels: 2
Gate type supported: N-Channel MOSFET
Supply voltage range: 3.5V to 14V
Logic voltage levels: VIL 0.8V, VIH 2.2V
Peak output current: 3A (source), 5A (sink)
Non-inverting input type
Rise time (typical): 14ns
Fall time (typical): 12ns
Quality and Safety Features
Extended operating temperature suitable for industrial applications
Designed for safe operation within specified electrical characteristics
Compatibility
Compatible with low-side N-Channel MOSFETs
Designed for surface mount technology with an 8-HVSSOP package
Application Areas
Switching power supplies
Motor control circuits
Power converters and inverters
Other power management applications where N-Channel MOSFETs are used
Product Lifecycle
Obsolete product
Replacements or upgrades may be available from Texas Instruments
Several Key Reasons to Choose This Product
High-efficiency switch driving capability
Well-suited for high-temperature industrial environments
Robust peak output current for high-performance applications
Fast switching enhances operational speed and reduces losses
Versatility in voltage and temperature specifications allows for a wide range of use cases
LM5110-1SDTexas InstrumentsIC GATE DRVR LOW-SIDE 10WSON