Manufacturer Part Number
LM5109BQNGTRQ1
Manufacturer
Texas Instruments
Introduction
Automotive qualified high voltage gate driver
Product Features and Performance
Handles half-bridge N-Channel MOSFET configurations
Dual independent driver channels
Peak output current of 1A for both sourcing and sinking
Supports bootstrap operation with a high-side voltage of up to 108V
Fast rise and fall times of 15ns
Operational temperature range from -40°C to 125°C
Integrated under-voltage lockout (UVLO)
Robust ground bounce immunity
Product Advantages
Automotive grade reliability
High drive strength for good MOSFET performance
Ability to withstand harsh automotive environments
Key Technical Parameters
Supply voltage from 8V to 14V
Logic threshold voltages VIL at 0.8V, VIH at 2.2V
1A peak source and sink current
Quality and Safety Features
AEC-Q100 qualification for automotive safety
Cycle-by-cycle edge rate control minimizes EMI
Compatibility
Surface mount compatible with 8-WDFN exposed pad
Suitable for use with N-Channel MOSFETs
Application Areas
Automotive motor control
Power converters
Power inverters
Product Lifecycle
Active product status
No announced discontinuation, with ongoing support and availability
Several Key Reasons to Choose This Product
High-reliability performance in extreme temperatures
Low propagation delay for improved switching performance
Energy-efficient with low quiescent current
Meets stringent automotive industry standards
Compact WSON package for space-sensitive applications