Manufacturer Part Number
IXFK24N100
Manufacturer
IXYS Corporation
Introduction
The IXFK24N100 is a high-performance N-channel MOSFET from IXYS Corporation, designed for a wide range of power electronics applications.
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 1000V
Continuous Drain Current (Id) of 24A at 25°C
On-State Resistance (Rds(on)) of 390mΩ at 12A, 10V
Operating Temperature Range of -55°C to 150°C
Input Capacitance (Ciss) of 8700pF at 25V
Power Dissipation (Tc) of 560W
Product Advantages
High voltage and current handling capabilities
Low on-state resistance for improved efficiency
Wide operating temperature range
Suitable for a variety of power electronics applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1000V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 390mΩ @ 12A, 10V
Threshold Voltage (Vgs(th)): 5.5V @ 8mA
Input Capacitance (Ciss): 8700pF @ 25V
Power Dissipation (Tc): 560W
Quality and Safety Features
RoHS3 compliant
Through-hole mounting
Compatibility
Suitable for a wide range of power electronics applications, including motor drives, power supplies, and industrial control systems.
Application Areas
Power electronics
Motor drives
Power supplies
Industrial control systems
Product Lifecycle
The IXFK24N100 is an active product and there are no immediate plans for discontinuation.
Replacement or upgrade options may be available from IXYS Corporation.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-state resistance for improved efficiency
Wide operating temperature range
Suitable for a variety of power electronics applications
RoHS3 compliance and through-hole mounting for easy integration