Manufacturer Part Number
IXFK230N20T
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET with trench technology
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 200V
On-resistance (Rds(on)) of 7.5mΩ at 60A and 10V
Continuous Drain Current (Id) of 230A at 25°C case temperature
Input Capacitance (Ciss) of 28,000pF at 25V
Power Dissipation (Ptot) of 1,670W at 25°C case temperature
Trench MOSFET technology for low on-resistance and high current handling
Product Advantages
Excellent power handling and efficiency
Compact TO-264 package for efficient heat dissipation
Suitable for high-current, high-power switching applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±20V
On-resistance (Rds(on)): 7.5mΩ @ 60A, 10V
Continuous Drain Current (Id): 230A @ 25°C
Input Capacitance (Ciss): 28,000pF @ 25V
Power Dissipation (Ptot): 1,670W @ 25°C
Quality and Safety Features
RoHS3 compliant
Trench MOSFET technology for high reliability
Compatibility
Suitable for a wide range of high-power, high-current switching applications
Application Areas
Motor drives
Power supplies
Inverters
Electric vehicle systems
Industrial automation equipment
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgrade options may be available from IXYS Corporation.
Key Reasons to Choose This Product
Excellent power handling and efficiency for high-current, high-power applications
Compact TO-264 package with efficient heat dissipation
Reliable trench MOSFET technology for long-term performance
RoHS3 compliance for environmental responsibility
Wide range of compatible applications in various industries
