Manufacturer Part Number
IXFK180N25T
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET transistor
Part of the HiPerFET and Trench series
Product Features and Performance
Operates in temperature range of -55°C to 150°C
Drain to source voltage up to 250V
Gate voltage (Vgs) range of ±20V
Low on-resistance (Rds(on)) of 12.9mΩ @ 60A, 10V
Continuous drain current (Id) of 180A at 25°C
Product Advantages
Efficient and reliable power switching
Wide operating temperature range
Excellent thermal performance
Suitable for high-power applications
Key Technical Parameters
MOSFET technology
N-Channel FET type
Threshold voltage (Vgs(th)) of 5V @ 8mA
Input capacitance (Ciss) of 28,000pF @ 25V
Power dissipation up to 1,390W
Quality and Safety Features
RoHS3 compliant
Packaged in TO-264AA (IXFK) through-hole mounting
Compatibility
Suitable for a wide range of high-power electronic applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Current production model
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
High power handling capability
Efficient and reliable performance
Wide operating temperature range
Proven IXYS Corporation quality and reliability
