Manufacturer Part Number
IXFK180N10
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET transistor
Product Features and Performance
Drain to Source Voltage (Vdss) up to 100V
Continuous Drain Current (Id) up to 180A at 25°C
Ultra-low on-resistance (Rds(on)) down to 8mΩ
Fast switching speed
High power density
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent thermal management
Reliable performance
Robust design
Key Technical Parameters
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 8mOhm @ 90A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
Power Dissipation (Max): 560W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and automotive applications
Compatibility
Package: TO-264-3, TO-264AA
Mounting Type: Through Hole
Application Areas
Power conversion
Motor drives
Switching power supplies
Industrial and automotive electronics
Product Lifecycle
Current production, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose This Product
Exceptional performance in high-current, high-power applications
Optimized for efficient and reliable power switching
Robust design and wide operating temperature range
Compatibility with common industrial packaging and mounting options
