Manufacturer Part Number
IXFK26N90
Manufacturer
IXYS Corporation
Introduction
High-performance MOSFET transistor for power electronics applications
Product Features and Performance
900V drain-to-source voltage rating
Low on-resistance of 300mOhm @ 13A, 10V
Continuous drain current of 26A at 25°C
Wide operating temperature range of -55°C to 150°C
Low gate charge of 240nC @ 10V
High power dissipation of 560W
Product Advantages
Excellent efficiency and low switching losses
Reliable and robust design
Suitable for high-voltage, high-current applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 900V
Gate-to-Source Voltage (Vgs): ±20V
Drain Current (Id): 26A
On-Resistance (Rds(on)): 300mOhm
Input Capacitance (Ciss): 10800pF
Power Dissipation (Pd): 560W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Through-hole mounting (TO-264AA package)
Application Areas
Power supplies
Motor drives
Inverters
Converters
Product Lifecycle
Currently available
No known plans for discontinuation
Key Reasons to Choose This Product
Excellent performance and efficiency for high-voltage, high-current applications
Robust and reliable design
Wide operating temperature range
Easy to integrate into power electronics systems